| PART |
Description |
Maker |
| AS081C60W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik GmbH
|
| AS081C40W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik GmbH
|
| AS098C60W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik GmbH
|
| AS081Q300W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik GmbH
|
| AS098C40W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik G...
|
| AS081Q1200W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik GmbH
|
| UPA1552H |
MOS FIELD EFFECT POWER TRANSISTOR ARRAY (FAST SWITCHING N-CHANNEL SILICON POWER MOS FET ARRAY)
|
NEC
|
| 2SJ502 |
Ultrahigh-Speed Switching Applications 超高速开关应
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| SID1010CM SID1F10CM SID1K10CM SID1010CXM SID1G10CM |
Infrared LEDs
Infrared LED(For Remote Control)(红外LED（用于远程控制）) 红外发光二极管（对于遥控器）（红外发光二极管（用于远程控制）
Infrared LEDs 5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
SANKEN[Sanken electric]
Sanken Electric Co., Ltd.
|
